BONDED OBJECT PRODUCTION METHOD AND PRODUCTION METHOD FOR CERAMIC CIRCUIT SUBSTRATE USING SAME
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United States of America Patent
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Issued Date -
Mar 7, 2024
app pub date -
Nov 14, 2023
filing date -
May 19, 2021
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Abstract
A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200° C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15° C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600° C. and not more than 950° C., and a process of cooling the stacked body from the bonding temperature to 200° C. at an average temperature lowering rate of the stacked body of not less than 15° C./min. A ceramic substrate is favorably a silicon nitride substrate.
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