VAPOR DEPOSITION OF TELLURIUM NANOMESH ELECTRONICS ON ARBITRARY SURFACES AT LOW TEMPERATURE
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United States of America Patent
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Issued Date -
Mar 7, 2024
app pub date -
Mar 31, 2023
filing date -
Sep 5, 2022
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Abstract
A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature. The first temperature is higher than the second temperature. The rationally designed nanomesh exhibits exciting properties, such as micrometer-level patterning capacity, excellent field-effect hole mobility, fast photoresponse in the optical communication region, and controllable electronic structure of the mixed-dimensional heterojunctions.
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