PLASMA-ASSISTED ANNEALING SYSTEM AND METHOD

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United States of America Patent

APP PUB NO 20240079230A1
SERIAL NO

18079069

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Abstract

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A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.

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Patent Owner(s)

Patent OwnerAddress
METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRENO 1001 KAONAN HIGHWAY NANZI DIST KAOHSIUNG CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Chun-Kai Kaohsiung City, TW 62 272
Hung, Cheng-Yuan Kaohsiung City, TW 11 4
Tien, Wei-Chen Chiayi City, TW 3 0
Wu, Yii-Der Kaohsiung City, TW 9 7
Ye, Chang-Sin Tainan City, TW 7 1

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