PHOTOMASK AND METHODS FOR MEASURING AND MANUFACTURING THE PHOTOMASK
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United States of America Patent
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Issued Date -
Mar 7, 2024
app pub date -
Sep 1, 2022
filing date -
Sep 1, 2022
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Abstract
A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.
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