METHOD FOR CORRECTING LITHOGRAPHY PATTERN OF SURFACE PLASMA
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United States of America Patent
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Issued Date -
Mar 7, 2024
app pub date -
Nov 2, 2021
filing date -
Nov 2, 2021
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Abstract
Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.
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