REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
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United States of America Patent
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Issued Date -
Mar 7, 2024
app pub date -
Nov 12, 2021
filing date -
Jan 12, 2021
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Abstract
There is provided a reflective photomask blank capable of suppressing or reducing the shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and sufficiently having heat resistance in exposure. The reflective photomask blank is configured to have a substrate 1, a reflective layer 2 including a multi-layer film formed on the substrate 1, and an absorption layer 4 formed on the reflective layer 2. The absorption layer 4 contains a total of 50 at % or more of indium (In) and nitrogen (N). The atomic number ratio (N/In) of nitrogen (N) to indium (In) in the absorption layer 4 is set to 0.5 or more and 1.5 or less. The layer thickness of the absorption layer 4 is set to 17 nm or more and 45 nm or less.
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