WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, AND WAFER AND EPITAXIAL WAFER MANUFACTURED THEREBY

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United States of America Patent

APP PUB NO 20240076799A1
SERIAL NO

18499603

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Abstract

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A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

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Patent Owner(s)

Patent OwnerAddress
SENIC INCCHUNGCHEONGNAM-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Jung Woo Suwon-si, KR 66 197
JANG, Byung Kyu Suwon-si, KR 22 18
KIM, Jung-Gyu Suwon-si, KR 35 40
KO, Sang Ki Suwon-si, KR 24 39
KU, Kap-Ryeol Suwon-si, KR 28 20
LEE, Yeon Sik Suwon-si, KR 4 2
PARK, Jong Hwi Suwon-si, KR 47 37
YANG, Eun Su Suwon-si, KR 11 8

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