AMORPHOUS PHASE MODIFICATION APPARATUS AND PROCESSING METHOD OF SINGLE CRYSTAL MATERIAL

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United States of America Patent

APP PUB NO 20240075558A1
SERIAL NO

18454069

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Abstract

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A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 μm to 600 μm, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALWAFERS CO LTDHSINCHU TAIWAN
MRADIAN FEMTO SOURCES CO LTD1B3-2 LIXING FIRST RD EAST DISTRICT HSINCHU CITY 30078

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chien Chung Hsinchu, TW 12 81
Li, I-Ching Hsinchu, TW 27 20
Tsai, Chia-Chi Hsinchu, TW 29 70
Wang, Bo-Kai Hsinchu, TW 10 16
Wang, Shang-Chi Hsinchu, TW 11 6

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