BAW RESONATOR WITH LEAKY REFLECTOR
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United States of America Patent
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Issued Date -
Feb 29, 2024
app pub date -
Jul 18, 2023
filing date -
Aug 30, 2022
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Abstract
The present disclosure relates to a bulk acoustic wave (BAW) resonator that includes a bottom electrode, a top electrode structure with a border ring (BO) structure, a piezoelectric layer sandwiched between the bottom electrode and the top electrode, and a reflector with a high acoustic impedance layer embedded in a low acoustic impedance region. Herein, the BO structure is formed about a periphery of the top electrode structure and defines a BO region of the BAW resonator. The high acoustic impedance layer is vertically underneath the bottom electrode and is separated from the bottom electrode by a first portion of the low acoustic impedance region. A width of the first high acoustic impedance layer is smaller than a width of the top electrode structure, such that the first high acoustic impedance layer does not extend completely through the BO region of the BAW resonator.
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