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Abstract

The present Specification is directed to the heterogeneous integration of compound-semiconductor devices on indirect-bandgap material substrates. A chip comprising compound-semiconductor layer stack disposed on a handle substrate of germanium is bonded, stack-side down, to a silicon layer disposed on a host substrate. The use of a germanium handle substrate enables the handle substrate to be removed after bonding using methods that are highly selective for germanium over the compound semiconductor layer stack. As a result, the compound-semiconductor layer stack does not need to be protected during handle substrate removal and the handle substrate can be completely removed without causing damage to the compound-semiconductor layer stack. As a result, after handle-substrate removal, the materials of the layer stack can be processed further to define one or more optically active devices in conventional fashion.

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First Claim