Importance

Loading Importance Indicators...

Abstract

An SiC single-crystal growth apparatus and a method of growing an SiC crystal are provided capable of reducing variations in the temperature distribution in the seed crystal and/or reducing deformation of, and/or damage to, the seed crystal, thereby growing an SiC single crystal with reduced defects and/or cracks. An SiC single-crystal growth apparatus (1) includes: a heating vessel (10) including a source material-containing portion (12) adapted to contain a solid source material of SiC in one of an upper portion or a lower portion (e.g., on the bottom portion 13) of an interior space S defined by a cylindrical peripheral side portion (14), and including a seat (17) located in another portion located opposite to said one portion (e.g., lid (16)) for allowing a seed crystal (2) of SiC to be mounted thereon; and a heating member (3) adapted to heat the solid source material M(s), where: the seed crystal (12) is mounted on the seat (17) with a first anisotropic sheet (41) positioned therebetween, the first anisotropic sheet having anisotropy in thermal conductivity; and, in the first anisotropic sheet (41), the thermal conductivity in a direction in the plane of the sheet, x, is high and the thermal conductivity in the thickness direction of the sheet, y, is low.

Loading the Abstract Image...

First Claim