METHOD FOR FABRICATING ENHANCEMENT MODE TRANSISTOR MATERIAL, ENHANCEMENT MODE TRANSISTOR MATERIAL FABRICATED THEREBY, ENHANCEMENT MODE TRANSISTOR INCLUDING THE SAME, AND AMPLIFYING CIRCUIT INCLUDING THE SAME

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United States of America Patent

APP PUB NO 20240068120A1
SERIAL NO

18454447

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Disclosed are a method for fabricating an enhancement mode transistor material, an enhancement mode transistor material fabricated thereby, an enhancement mode transistor including the same, and an amplifying circuit including the same. The method for fabricating an enhancement mode transistor material includes: a first step of mixing and reacting a solution including a conductive polymer and an ionic reactant including a negative ion that enables deprotonation of the conductive polymer.

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Patent Owner(s)

Patent OwnerAddress
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYCORPORATE COLLABORATION CENTER SUNGKYUNKWAN UNIVERSITY 2066 SEOBU-RO JANGAN-GU GYEONGGI-DO SUWON-SI 16419

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOY, Seung Hwan Daejeon, KR 1 0
JO, Young Jin Gwangmyeong-si, KR 7 1
KIM, Tae Il Pyeongtaek-si, KR 134 1084

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