CHLORINE-CONTAINING PRECURSORS FOR ION IMPLANTATION SYSTEMS AND RELATED METHODS
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United States of America Patent
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Issued Date -
Feb 22, 2024
app pub date -
Aug 22, 2023
filing date -
Aug 22, 2022
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Abstract
A system and method for generating aluminum ions for implantation into a substrate. The system and method comprise flowing a chlorine-containing gas from a first vessel, optionally with a hydrogen-containing co-gas and optionally with a fluorine-containing co-gas, to an ion source chamber of an ion implantation device. The ion source chamber comprises a solid aluminum target material. At the ion source chamber, aluminum ions are generated for implantation into a substrate.
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