METHOD AND APPARATUS FOR CHARACTERIZATION OF A MICROLITHOGRAPHY MASK
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United States of America Patent
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Issued Date -
Feb 22, 2024
app pub date -
Oct 30, 2023
filing date -
May 27, 2021
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Abstract
The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask to be characterized is illuminated with light from a light source via an illumination optics unit, said light having a wavelength of less than 30 nm, wherein light that passes in a used beam path from the light source via the mask to a sensor unit is evaluated, wherein, at least intermittently, a portion of the light emitted by the light source is outcoupled from the used beam path by use of a mirror array having a multitude of independently adjustable mirror elements, and wherein, intermittently by use of the mirror array, all light is outcoupled from the used beam path for establishment of a defined illumination time of the sensor unit.
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