QUANTUM DOT AND METHOD FOR PRODUCING THE SAME

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United States of America Patent

APP PUB NO 20240059966A1
SERIAL NO

18383091

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Abstract

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To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

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Patent Owner(s)

Patent OwnerAddress
NS MATERIALS INCJAPAN'S FUKUOKA COUNTY CHIKUSHINO MING TEMPLE 511-1 CHIKUSHINO-SHI FUKUOKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIEDA, Tomoaki Fukuoka, JP 2 4
KALOUSEK, Vit Fukuoka, JP 5 4
MICHIWAKI, Yoko Fukuoka, JP 4 4
MISHIMA, Akio Fukuoka, JP 31 242
NIKATA, Soichiro Fukuoka, JP 18 9
OGURA, Yuko Fukuoka, JP 15 7

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