SELF-BIASED 4H-SIC MOS DEVICES FOR RADIATION DETECTION
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Feb 15, 2024
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Jun 7, 2023
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Aug 8, 2022
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Described herein are methods and systems for fabrication of high-performing metal-oxide-semiconductor (MOS) devices by depositing yttrium oxide epitaxial layers through pulsed laser deposition on high quality 4H—SiC epitaxial layers. The novel MOS devices revealed an extraordinarily long hole diffusion length that has never been reported. These devices have been investigated as radiation detectors which demonstrated an excellent radiation response at zero applied bias (self-biased) with a record-high energy resolution.
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