SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 8, 2024
app pub date -
Aug 2, 2022
filing date -
Aug 2, 2022
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor structure includes a semiconductor substrate, a gate electrode, a first spacer, and a first contact etch stop layer (CESL). The semiconductor substrate includes a fin structure. The gate electrode is over the fin structure. The first spacer is over the fin structure and on a lateral side of the gate electrode, wherein a top surface of the first spacer is inclined towards the gate electrode. The first CESL is over the fin structure and contacting the first spacer, wherein an angle between the top surface of the first spacer and a sidewall of the first CESL is less than about 140°.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully