MANUFACTURING METHOD OF POROUS SILICON MATERIAL, POROUS SILICON MATERIAL, AND POWER STORAGE DEVICE

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United States of America Patent

APP PUB NO 20240043966A1
SERIAL NO

18490865

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Abstract

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The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

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Patent Owner(s)

Patent OwnerAddress
TOYOTA JIDOSHA KABUSHIKI KAISHA1 TOYOTA-CHO TOYOTA-SHI AICHI-KEN 471-8571

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAWAURA, Hiroyuki Nagakure-shi, JP 10 26
KONDO, Yasuhito Nagakute-shi, JP 22 287
NOZAKI, Hiroshi Nagakure-shi, JP 17 81
OTAKI, Mitsutoshi Susono-shi, JP 66 59
SUZUKI, Ryo Nagakure-shi, JP 310 1888
WASEDA, Tetsuya Susono-shi, JP 36 54
YOSHIDA, Jun Mishima-shi, JP 227 1333

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