HIGH PHASE-PURITY GROWTH OF 1T'-TRANSITION METAL DICHALCOGENIDE MONOLAYERS

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United States of America Patent

APP PUB NO 20240043694A1
SERIAL NO

18358899

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Abstract

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A method of forming a 1T′-phase transition metal dichalcogenide monolayer. A transition metal precursor and a first solvent are mixed to form a first mixture. A non-oxygen chalcogen or non-oxygen chalcogen precursor and a second solvent are mixed to form a second mixture. The first mixture is rapidly injected into the second mixture at a temperature between approximately 250 and 350° C. to form a third mixture. 1T′-transition metal dichalcogenide monolayers are recovered from the third mixture. The transition metals may be molybdenum or tungsten, while the non-oxygen chalcogens may be sulfur, selenium, or tellurium. The 1T′-transition metal dichalcogenide monolayers can be grown on a variety of metal substrates to form metal@ 1T′-transition metal dichalcogenide monolayer heterostructures. A flexible 4H-Au@1T′-WS2/SiO2/PDMS SERS tape was fabricated to detect the SARS-CoV-2 spike protein. The tape is capable of attomole-level detection of SARS-CoV-2 spike protein, for real-time monitoring of COVID-19.

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Patent Owner(s)

Patent OwnerAddress
CITY UNIVERSITY OF HONG KONG83 TAT CHEE AVENUE KOWLOON

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LI, Zijian Hong Kong, HK 16 7
ZHAI, Li Hong Kong, HK 14 10
ZHANG, Hua Hong Kong, HK 534 3218

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