SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

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United States of America Patent

APP PUB NO 20240040773A1
SERIAL NO

17888525

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Abstract

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The present disclosure provides a semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an insulating layer, a plurality of bit lines, and a bit line contact. The insulating layer is disposed on the substrate, the bit lines are disposed on the insulating layer, and the bit line contact is disposed between the bit lines and the substrate, to electrically connect the bit lines, wherein the bit line contact comprises a first conductive layer and a first oxidized interface layer, and a bottommost surface of the first oxidized interface layer is lower than a top surface of the insulating layer. Through these arrangements, the semiconductor device includes the bit line contact having a composite semiconductor layer, which is allowable to improve the structural reliability of the bit lines and the bit line contacts, thereby achieve better performance.

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Patent Owner(s)

Patent OwnerAddress
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTDNO 88 LIANHUA AVENUE INTEGRATED CIRCUIT SCIENCE PARK JINJIANG CITY QUANZHOU CITY FUJIAN PROVINCE 362200 QUANZHOU CITY FUJIAN PROVINCE 362200

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lu, Tsuo-Wen Quanzhou City, CN 50 547
Shangguan, Mingqin Quanzhou City, CN 2 1
Wang, Xiqin Quanzhou City, CN 1 0
Ye, Changfu Quanzhou City, CN 3 13

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