INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME

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United States of America Patent

APP PUB NO 20240038665A1
SERIAL NO

17877387

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Abstract

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An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Hsiao-Kang Hsinchu, TW 59 103
CHENG, Kai-Fang Hsinchu, TW 46 92
LEE, Cheng-Chin Hsinchu, TW 85 67
TSAI, Cherng-Shiaw Hsinchu, TW 37 35
WU, Yen-Ju Hsinchu, TW 12 4

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