METHOD FOR ELECTRON BEAM-INDUCED PROCESSING OF A DEFECT OF A MICROLITHOGRAPHIC PHOTOMASK
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United States of America Patent
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Issued Date -
Feb 1, 2024
app pub date -
Jul 27, 2023
filing date -
Jul 27, 2022
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Abstract
A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of:
- a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, andb) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.
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