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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
SEMES CO LTD	77 4SANDAN 5-GIL JIKSAN-EUP SEOBUK-GU CHEONAN-SI CHUNGCHEONGNAM-DO

International Classification(s)

• C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....

• 2023 Application Filing Year
• C23F Class
• 119 Applications Filed
• 41 Patents Issued To-Date
• 34.46 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
CHUNG, Young Dae	Chungcheongnam-do, KR	20	60
# of filed Patents : 20 Total Citations : 60
JEONG, Ji Hoon	Chungcheongnam-do, KR	41	126
# of filed Patents : 41 Total Citations : 126
KIM, Tae Shin	Chungcheongnam-do, KR	20	12
# of filed Patents : 20 Total Citations : 12
KIM, Won Geun	Chungcheongnam-do, KR	7	11
# of filed Patents : 7 Total Citations : 11
LEE, Jee Young	Chungcheongnam-do, KR	19	68
# of filed Patents : 19 Total Citations : 68
SON, Won Sik	Chungcheongnam-do, KR	15	0
# of filed Patents : 15 Total Citations : 0

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• 0 Citation Count
• C23F Class

• 0 % this patent is cited more than
• 1 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Aug 1, 2027
7.5 Year Payment	$3600.00	$1800.00	$900.00	Aug 1, 2031
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Aug 1, 2035

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 3.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2024/0035,166

APPARATUS AND METHOD OF PROCESSING SUBSTRATE

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Abstract

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A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

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Description

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Claims

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