EPITAXIAL SUBSTRATE SURFACES FOR SEMICONDUCTOR MATERIAL GROWTH AND IMPROVED SMOOTH SEMICONDUCTOR SURFACES FOR HIGHER CHANNEL MOBILITY THROUGH THE FORMATION AND REMOVAL OF REACTIVE LAYERS
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United States of America Patent
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Jan 18, 2024
app pub date -
Jul 13, 2023
filing date -
Jul 13, 2022
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Abstract
A method for processing a surface, comprising obtaining a substrate comprising an epitaxially grown semiconductor; reacting a surface of the semiconductor and/or a surface of a dielectric layer on the semiconductor, with a reactant comprising a gas or a plasma, to form a reactive layer on the dielectric layer and/or the semiconductor, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer or the semiconductor; and processing (e.g., removing, modifying, and/or chemically reducing) the reactive layer, wherein the processing at least smoothens, controls defects at, improves the electrical properties of, or the optical properties of, the surface
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