MAGNETORESISTIVE SENSOR ELEMENT HAVING A WIDE LINEAR RESPONSE AND ROBUST NOMINAL PERFORMANCE AND MANUFACTURING METHOD THEREOF
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Jan 18, 2024
app pub date -
Oct 28, 2021
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Nov 3, 2020
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Abstract
A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.
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