METHOD OF PRODUCING THIN-FILM

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United States of America Patent

APP PUB NO 20240018654A1
SERIAL NO

18036975

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Abstract

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Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:

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Patent Owner(s)

Patent OwnerAddress
ADEKA CORPORATIONTOKYO 116-8554

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HATASE, Masako Tokyo, JP 25 15
MITSUI, Chiaki Tokyo, JP 9 0
NISHIDA, Akihiro Tokyo, JP 58 349
OOE, Yoshiki Tokyo, JP 6 0
YOSHINO, Tomoharu Tokyo, JP 37 44

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