STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED METHODS
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Jan 11, 2024
app pub date -
Jul 11, 2022
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Jul 11, 2022
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Abstract
Structures for a ferroelectric field-effect transistor and methods of forming a structure for a ferroelectric field-effect transistor. The structure comprises a gate stack having a ferroelectric layer, a first conductor layer, and a second conductor layer positioned in a vertical direction between the first conductor layer and the ferroelectric layer. The first conductor layer comprises a first material, the second conductor layer comprises a second material different from the first material, and the second conductor layer is in direct contact with the ferroelectric layer.
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