SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jan 11, 2024
app pub date -
Jun 23, 2023
filing date -
Jul 5, 2022
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Abstract
A semiconductor device of trench gate type is formed of a group III nitride semiconductor. The semiconductor device has a substrate, a first layer, a second layer, and a third layer accumulated in this order, and further has a trench penetrating through the third layer and the second layer and reaching the first layer. A side surface of the trench, exposed to the second layer, is perpendicular to a main surface of the substrate. A side surface of the trench, exposed to the third layer, includes a first region which is perpendicular to the main surface of the substrate, and a second region above the first region, which is inclined with respect to the main surface of the substrate. A cross-sectional area of the trench at the second region in a plane parallel to a bottom surface of the trench increases from a bottom toward an upper of the trench.
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