REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
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United States of America Patent
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Issued Date -
Jan 11, 2024
app pub date -
Sep 19, 2023
filing date -
Apr 23, 2018
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Abstract
In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include forming at least one dielectric region in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.
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