ETCHING COMPOSITION FOR SELECTIVELY ETCHING SILICON NITRIDE, ETCHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Jan 11, 2024
app pub date -
Jun 15, 2023
filing date -
Jul 6, 2022
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Abstract
Disclosed are an etching composition for selectively etching a silicon nitride, an etching method using the same, and a manufacturing method of a semiconductor device. The disclosed etching composition is an etching composition capable of increasing an etching selectivity for a silicon nitride over a silicon oxide and a polycrystalline silicon, and may include an inorganic acid, a solvent, and an additive, and the additive may include one or both of a compound containing an epoxy group and a compound containing a vinyl group. The compound containing the epoxy group may include one or more of glycid, allyl glycidyl ether, epichlorohydrin, 1,2-epoxy-3-phenoxypropane and 2,3-epoxypropyl benzene. The compound containing the vinyl group may include one or both of vinyl bromide and phenyl vinyl ether.
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