NONVOLATILE MEMORY WITH SELF-TRACKING IREF
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United States of America Patent
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Issued Date -
Jan 4, 2024
app pub date -
Jun 30, 2022
filing date -
Jun 30, 2022
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Abstract
A nonvolatile memory (NVM) device having a programmable, self-tracking reference current design and a method of fabricating the same. A differential reference cell corresponding to a particular wordline is operable to generate a total reference cell current comprising an ON current and an OFF current driven by respective reference memory cells that form the differential reference cell. A reference current generator is operable to provide a scalable fraction of the total reference cell current as a reference current (IREF) for facilitating sensing operations by a sense amplifier block.
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