METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jan 4, 2024
app pub date -
Jul 1, 2022
filing date -
Jul 1, 2022
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Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A portion of the photoresist layer is exposed, using a mask, to a radiation. The photoresist layer is treated, using a basic gas. The photoresist layer is developed to form a patterned photoresist layer over the substrate.
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