SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSITION EPITAXIAL GROWTH PROCESS
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United States of America Patent
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Jan 4, 2024
app pub date -
Aug 31, 2021
filing date -
Sep 3, 2020
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Abstract
A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, and 130 nm for three layers, and have a gyromagnetic ratio of 2.80 MHz per Oe, Gilbert damping ranges from 0.0003 to 0.001, 4πM$ values between 1650 G to 1780 G, coercivity from 1 Oe. to 5 Oe, and surface roughness of RMS 0.20 nm for up to 10 layers. Fabrication is economical and uses only a spinner, a drying station (RT to 150 C temperature control), and a quartz tube furnace that accommodates a flowing atmosphere of research grade oxygen, thereby eliminating the need for high vacuum deposition chambers.
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