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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
INFINEON TECHNOLOGIES AG	CAMPBELL 1-15 NAUBIBERG GERMANY NEUBIBERG BAVARIA

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• 2023 Application Filing Year
• H01L Class
• 19835 Applications Filed
• 4214 Patents Issued To-Date
• 21.25 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Kern, Ronny	Villach, AT	22	18
# of filed Patents : 22 Total Citations : 18
Kramp, Stefan	Villach, AT	16	43
# of filed Patents : 16 Total Citations : 43
Krivec, Stefan	Villach, AT	22	57
# of filed Patents : 22 Total Citations : 57
Langer, Gregor	Wölfnitz, AT	23	165
# of filed Patents : 23 Total Citations : 165
Winkler, Hannes	Villach, AT	3	0
# of filed Patents : 3 Total Citations : 0
Woehlert, Stefan	Villach, AT	25	52
# of filed Patents : 25 Total Citations : 52

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• H01L Class

• 0 % this patent is cited more than
• 2 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Jun 28, 2027
7.5 Year Payment	$3600.00	$1800.00	$900.00	Jun 28, 2031
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Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2023/0420,257

Chip with a Silicon Carbide Substrate

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Abstract

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A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.

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Description

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