SEMICONDUCTOR MEMORY DEVICE
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United States of America Patent
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Issued Date -
Dec 21, 2023
app pub date -
Mar 7, 2023
filing date -
Jun 21, 2022
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Abstract
A semiconductor memory device includes: a memory cell array including memory cells, each including an oxide semiconductor transistor; a first insulating layer disposed above the memory cell array; a first wiring layer disposed between the memory cell array and the first insulating layer; a second insulating layer extending in a vertical direction. The second insulating layer has an annular cross-section. The semiconductor memory device includes a third insulating layer further disposed over the first insulating layer, a portion of the third insulating layer being surrounded by the second insulating layer.
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