SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 14, 2023
app pub date -
Aug 28, 2023
filing date -
Dec 27, 2018
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully