INTEGRATED RESISTOR-TRANSISTOR-CAPACITOR SNUBBER
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United States of America Patent
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Issued Date -
Dec 14, 2023
app pub date -
May 1, 2023
filing date -
Jun 10, 2022
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Abstract
A circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a snubber circuit coupled between a drain and a source of the MOSFET. The snubber circuit includes a transistor disposed in parallel to the MOSFET. The transistor has a floating gate. The circuit further includes a capacitor in series with the transistor, and a resistor disposed parallel to the capacitor.
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