REFLECTIVE SEMICONDUCTOR DEVICE WITH MIRROR ELEMENTS HAVING TWO OXIDE LAYERS OVER ALUMINUM LAYER, AND RELATED METHOD
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United States of America Patent
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Issued Date -
Dec 14, 2023
app pub date -
Jun 10, 2022
filing date -
Jun 10, 2022
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Abstract
A reflective semiconductor device includes an integrated circuit (IC) structure, and a pair of mirror elements over the IC structure. The pair of mirror elements are separated by a trench. Each mirror element includes a mirror layer of, for example, aluminum, on the IC structure, and a low temperature oxide (LTO) layer on the mirror layer. A high temperature oxide (HTO) layer is over the pair of mirror elements and fills the trench. A liquid crystal layer over the mirror elements provides a liquid crystal on semiconductor (LCOS) device. The two-oxide layer prevents mirror layer creep and/or agglomeration during formation of the HTO layer and provide a suitable surface for LCOS assembly without using specialized alloys.
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