SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20230402382A1
SERIAL NO

18113715

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Abstract

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A semiconductor device includes: a base substrate; a first interlayer insulating layer disposed on the base substrate; a power rail disposed inside the first interlayer insulating layer; an active pattern extended in a first horizontal direction and disposed on the first interlayer insulating layer; a gate electrode extended in a second horizontal direction different from the first horizontal direction and disposed on the active pattern; a gate cut extended in the first horizontal direction and disposed on the power rail, wherein the gate cut separates the gate electrode; and a power rail via disposed inside the gate cut, wherein the power rail via is overlapped by the power rail.

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First Claim

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU GYEONGGI-DO SUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHA, Seung Min Suwon-si, KR 1 0
CHO, Hag Ju Suwon-si, KR 8 391
KIM, Ho-Jun Suwon-si, KR 36 151
KIM, Jin Kyu Suwon-si, KR 76 653
LEE, Kyoung Woo Suwon-si, KR 54 537
LEE, Sung Moon Suwon-si, KR 11 15
NAM, Yun Suk Suwon-si, KR 6 21
OH, Da Rong Suwon-si, KR 1 0

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