Semiconductor Wafer Dicing Method
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United States of America Patent
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Issued Date -
Dec 14, 2023
app pub date -
Jun 13, 2022
filing date -
Jun 13, 2022
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Abstract
A semiconductor die is separated from a semiconductor wafer using a method that involves performing a partial cut on the semiconductor wafer, applying tape lamination to a front side of the semiconductor wafer, grinding a back side of the semiconductor wafer, mounting the semiconductor wafer to a die attach film (DAF) layer, removing the tape lamination from the front side of the semiconductor wafer, and performing a DAF-die separation operation to separate the semiconductor die from the adjacent semiconductor die. A DAF laser is not used during the method of separating a semiconductor die from a semiconductor wafer. The front side is the side of the semiconductor wafer where integrated circuits are exposed. The partial cut is between the semiconductor die and an adjacent semiconductor die. The back side is opposite of the front side and the back side is a silicon layer of the semiconductor die.
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