THIN-FILM TRANSISTOR SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS EMPLOYING THE THIN-FILM TRANSISTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Dec 7, 2023
app pub date -
Jun 21, 2022
filing date -
Oct 14, 2021
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Abstract
Provided are a thin-film transistor substrate, a manufacturing method thereof, and a display apparatus. The thin-film transistor substrate includes: a substrate; a buffer layer on the substrate; a semiconductor layer arranged on the buffer layer and including a first conductive area, a second conductive area, and a channel area between the first conductive area and the second conductive area; a first dopant doped in an upper portion of the channel area at a first concentration; a second dopant doped in a lower portion of the channel area at a second concentration and being of a different type from a type of the first dopant; a gate insulating layer covering the semiconductor layer; and a gate electrode overlapping the channel area in a plan view and disposed on the gate insulating layer.
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