PROTECTION DEVICE STRUCTURES WITH A DISCONTINUOUS ISOLATION WELL

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United States of America Patent

APP PUB NO 20230395714A1
SERIAL NO

17831496

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Abstract

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Device structures with an isolation well and methods of forming a device structure with an isolation well. The structure comprises a first well of a first conductivity type in a semiconductor substrate, and a second well of a second conductivity type in the semiconductor substrate. The second conductivity type is opposite to the first conductivity type. The first well includes a plurality of segments, and the second well is positioned in a vertical direction between the segments of the first well and a top surface of the semiconductor substrate.

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GLOBALFOUNDRIES U S INC2600 GREAT AMERICA WAY SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Krishnasamy, Rajendran Essex Junction, US 89 265
Loiseau, Alain Williston, US 71 395
Nath, Anindya Essex Junction, US 29 20

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