GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

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United States of America Patent

APP PUB NO 20230395373A1
SERIAL NO

18451934

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Abstract

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A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes.

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NGK INSULATORS LTDNAGOYA-SHI AICHI 467-8530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IMAI, Katsuhiro Nagoya-shi, JP 89 314
KOBAYASHI, Hiroki Chiryu-shi, JP 248 1354
SAKAI, Masahiro Nagoya-shi, JP 99 768

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