GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE
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Dec 7, 2023
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Aug 24, 2023
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Feb 25, 2021
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An object of the present invention is to provide a GaN crystal long in light emission lifetime by time-resolved photoluminescence measurement and provide high-quality GaN crystal and GaN substrate that have few specified crystal defects affecting the light emission lifetime. A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm−2 or less.
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