PHOTODIODE DETECTOR AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Nov 30, 2023
app pub date -
Oct 21, 2021
filing date -
Oct 28, 2020
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Abstract
According to embodiments of the present invention, a photodiode detector is provided. The photodiode detector includes an optical cavity including an overlying light-receiving portion and an underlying minor; and a GeSn absorption layer. The GeSn absorption layer may be disposed within the optical cavity and arranged between the overlying light-receiving portion and the underlying mirror. The overlying light-receiving portion may be configured to receive light to be detected by the photodiode detector. According to further embodiments of the present invention, a method of fabricating a photodiode detector is also provided.
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