FOCUS RING FOR A PLASMA-BASED SEMICONDUCTOR PROCESSING TOOL

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United States of America Patent

APP PUB NO 20230386799A1
SERIAL NO

18447410

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Abstract

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A focus ring for a plasma-based semiconductor processing tool is designed to provide and/or ensure etch rate uniformity across a wafer during a plasma etch process. The focus ring may include an angled inner wall that is angled away from a center of the focus ring to direct a plasma toward the wafer. The angle of the angled inner wall may be greater than approximately 130 degrees relative to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce and/or eliminate areas of overlapping plasma on the wafer (which would otherwise cause non-uniform etch rates). Moreover, an inner diameter may be configured to be in a range of approximately 209 millimeters to 214 millimeters to further reduce and/or eliminate areas of overlapping plasma on the wafer. In this way, the focus ring provides and/or increases etch rate uniformity across the wafer, which may reduce structural variations across semiconductor devices being formed on the wafer and/or may increase processing yield.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Chun Yan Zhubei City, TW 13 7
CHEN, Jr-Sheng Hsinchu City, TW 15 6
CHENG, Chung-Hsiu Banqiao City, TW 7 10
HSU, Chih-Hsien Hsinchu City, TW 32 179
HUANG, Sheng-Chieh Hsinchu, TW 17 62
HUNG, Chin-Tai Hsinchu, TW 2 0
LEE, Chou Feng Hsinchu County, TW 3 7
TSO, Chang Kuang Hsinchu, TW 1 0

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