SUB-RESOLUTION ASSIST FEATURES
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United States of America Patent
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Issued Date -
Nov 30, 2023
app pub date -
Aug 10, 2023
filing date -
Jul 23, 2019
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Abstract
Methods of semiconductor device fabrication are provided. In an embodiment, a method of semiconductor device fabrication includes receiving a first mask design comprising a first mask function, determining a transmission cross coefficient (TCC) of an exposure tool, decomposing the TCC into a plurality orders of eigenvalues and a plurality orders of eigenfunctions, calculating a kernel based on the plurality orders of eigenvalues and the plurality orders of eigenfunctions; and determining a first sub-resolution assist feature (SRAF) seed map by convoluting the first mask function and the kernel.
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