Semiconductor Device and Method of Forming Same
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United States of America Patent
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Issued Date -
Nov 23, 2023
app pub date -
May 23, 2022
filing date -
May 23, 2022
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Abstract
In an embodiment, a method of forming a semiconductor device includes: forming a first oxide layer over a semiconductor fin structure; performing a first nitridation process to convert the first oxide layer to an oxynitride layer; depositing a silicon-containing layer over the oxynitride layer; performing a first anneal on the silicon-containing layer, wherein after performing the first anneal, the oxynitride layer has a higher nitrogen atomic concentration at an interface with the semiconductor fin structure than in a bulk region of the oxynitride layer; and forming a dummy gate structure over the silicon-containing layer.
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