SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SAME
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United States of America Patent
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Issued Date -
Nov 16, 2023
app pub date -
Jul 26, 2023
filing date -
Jul 26, 2023
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Abstract
A semiconductor device includes: a bit line structure formed over a substrate; a storage node contact plug spaced apart from the bit line structure; and a nitride spacer positioned between the bit line structure and the storage node contact plug, wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure.
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