SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 16, 2023
app pub date -
Jun 9, 2022
filing date -
Jun 9, 2022
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Abstract
Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.
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